| PART |
Description |
Maker |
| GP-1000HD |
Designed for high durability applications
|
List of Unclassifed Man...
|
| UV131 |
Zinc-alloy durability
|
A-Data Technology
|
| 567UVG010MFBJ 187UVG016MFBJ |
High temperature ?Very Low ESR ?High ripple current ?stable with temperature ?High frequency
|
Illinois Capacitor, Inc...
|
| B7100 |
THE Bayfront series features a sturdy aluminum housing for greater durability and a diffusd lens to maximize output uniformity.
|
List of Unclassifed Manufacturers
|
| MPXV6115VC6U |
High Temperature Accuracy Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated
From old datasheet system
|
Motorola
|
| T1010H-6G T1010H-6G-TR T1010H-6T T1010H-6T-TR T101 |
High-temperature 10A sensitive gate Triacs
High temperature 10 A sensitive TRIACs
600 V, 10 A, TRIAC, TO-220AB
|
ST Microelectronics
STMicroelectronics
|
| T502B106K016AG6110 |
Tantalum, MnO2 Tantalum, High Temperature, T502, 10 uF, 10%, 16 V, 3528, SMD, MnO2, Molded, High Temperature, 230C, N/A, 2.8 Ohms, Height Max = 2.1mm
|
Kemet Corporation
|
| SIP-1987HT-01-1001FC SIP-1987HT-01-1001FD SIP-1987 |
TaNFilm垄莽 High Temperature DIP and SIP Networks
TaNFilm庐 High Temperature DIP and SIP Networks
TaNFilm? High Temperature DIP and SIP Networks
|
IRC - a TT electronics Company.
|
| CXOMHT |
High Temperature/High Stability/Fast Start-up/High Shock
|
STATEK CORPORATION
|
| 4040 |
Thermal Cycling Durability
|
Laird Tech Smart Techno...
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
|
